Book High-power coherent semiconductor laser design operating in the IR region Author Jha Asu R



SATURDAY, OCTOBER 6, 2012


High-power coherent semiconductor laser design operating in the IR region Author Jha Asu R


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Title:
High-power coherent semiconductor laser design operating in the IR region
Authors:
Jha, Asu R.
Affiliation:
AA(Jha Technical Consulting Services)
Publication:
Proc. SPIE Vol. 3465, p. 72-78,Millimeter and Submillimeter Waves IV, Mohammed N. Afsar; Ed. (SPIE Homepage)
Publication Date:
11/1998
Origin:
SPIE
Bibliographic Code:
1998SPIE.3465...72J

Abstract

Diode-pumped solid state (DPSS) lasers employing diode arrays and optical crystals suffer from excessive weight, low conversion efficiency, and high fabricationcost. 
This paper reveals a unique design of coherent, highperformance InGaAsP/InP strained-layer quantum-well (QW) semiconductor laser capable of delivering CWpower output greater than 500 mw at 1.55 microns. 

It is important to mention that InGaAsP/InP strained-layer double-quantum-well (DQW) laser diodes are capable of yielding even higher optical power output with improved differential quantum efficiency (DQE) and with lower threshold current at 20 deg C. Compact packaging, minimum power consumption, eye-safe operation and minimum cost are the major benefits of this laser design. 

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